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Results 1 to 25 of 584

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Room temperature manipulation of C60 molecules on a Si surfaceBETON, P. H; DUNN, A. W; MORIARTY, P et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 878-881, issn 0039-6028Conference Paper

A study of the surface electronic properties of Na/D/Si(100) by metastable de-excitation spectroscopyHONGO, S; FUJIMOTO, N; URANO, T et al.Applied surface science. 1997, Vol 112, pp 92-97, issn 0169-4332Conference Paper

A theoretical study of adsorption and the surfactant effect of Sb on the Ag(100) surfaceMING JIANG; ZHOU, X.-Y; MIN QIU et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 39, pp 8653-8659, issn 0953-8984Article

Carbon-60 induced structures on the clean and oxygen covered Cu (110) surface : competitive adsorptionPEDERSEN, M. Ø; MURRAY, P. W; LAEGSGAARD, E et al.Surface science. 1997, Vol 389, Num 1-3, pp 300-309, issn 0039-6028Article

Nanometer-scale passivation of Si(111) surfaces by using the √3 × √3-Ga reconstructionFUJITA, K; KUSUMI, Y; ICHIKAWA, M et al.Applied surface science. 1996, Vol 107, Num 1-4, pp 6-10, issn 0169-4332Conference Paper

The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxyDENTEL, D; BISCHOFF, J. L; ANGOT, T et al.Surface science. 1998, Vol 402-04, pp 211-214, issn 0039-6028Conference Paper

Hydrogen-induced reordering of the Si(111)(√3 X √3)-Bi surface studied by scanning tunneling microscopyNAITOH, M; SHIMAYA, H; OISHI, N et al.Applied surface science. 1998, Vol 123-24, pp 171-175, issn 0169-4332Conference Paper

Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anionSAKATA, K; SATO, T; NAKAMURA, K et al.Applied surface science. 2000, Vol 159-60, pp 392-397, issn 0169-4332Conference Paper

First-principles calculation on diffusion of Si adatoms on H/Si(001)-(2 x 1) surfaceNARA, J; SASAKI, T; OHNO, T et al.Applied surface science. 1998, Vol 130-32, pp 254-259, issn 0169-4332Conference Paper

Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfacesKAGESHIMA, H; SHIRAISHI, K.Applied surface science. 1998, Vol 130-32, pp 176-181, issn 0169-4332Conference Paper

4 x 1-Si substrate atoms reconstruction in the Si(111)4 x 1-In structureSARANIN, A. A; KHRAMTSOVA, E. A; IGNATOVICH, K. V et al.Applied surface science. 1997, Vol 113114, pp 440-444, issn 0169-4332Conference Paper

Textural Characterization of Micro- and Mesoporous Carbons Using Combined Gas Adsorption and n-Nonane PreadsorptionOSCHATZ, Martin; BORCHARDT, Lars; RICO-FRANCES, Soledad et al.Langmuir. 2013, Vol 29, Num 25, pp 8133-8139, issn 0743-7463, 7 p.Article

Scanning probe microscopy study of the molecular arrangement of CuPc crystal on Si(001)-(2 x 1)-HNAKAMURA, M; TOKUMOTO, H.Surface science. 1997, Vol 377-79, pp 85-89, issn 0039-6028Conference Paper

Fibroblast adhesion onto methyl-silica gradients with and without preadsorbed proteinWILLIAMS, R. L; HUNT, J. A; TENGVALL, P et al.Journal of biomedical materials research. 1995, Vol 29, Num 12, pp 1545-1555, issn 0021-9304Article

External surface areas of H-ZSM-5 zeolitesSAYARI, A; CRUSSON, E; KALIAGUINE, S et al.Langmuir. 1991, Vol 7, Num 2, pp 314-317, issn 0743-7463Article

Characterization of single wall carbon nanotubes by nonane preadsorptionBYL, Oleg; JIE LIU; YATES, John T et al.Carbon (New York, NY). 2006, Vol 44, Num 10, pp 2039-2044, issn 0008-6223, 6 p.Article

The initial stage of nucleation and growth of Al on H/Si(100)-1 x 1 by dimethylaluminum hydride vapor depositionSHEN, T.-C; WANG, C; TUCKER, J. R et al.Applied surface science. 1999, Vol 141, Num 3-4, pp 228-236, issn 0169-4332Conference Paper

Barrierless bond breaking and exchange diffusion on Si(100)-HSUKMIN JEONG; OSHIYAMA, A.Applied surface science. 1998, Vol 130-32, pp 287-291, issn 0169-4332Conference Paper

Photoemission of Xe adsorbed on Si(111)7 x 7, Ag/Si(111), Au/Si(111) and O/Si(111) surfacesPERVAN, P; MARKERT, K; WANDELT, K et al.Applied surface science. 1997, Vol 108, Num 3, pp 307-317, issn 0169-4332Article

Effects of H-termination on initial oxidation processYASUDA, Y; IKEDA, H; ZAIMA, S et al.Applied surface science. 1997, Vol 113114, pp 579-584, issn 0169-4332Conference Paper

Photochemistry of methane on deuterium-covered Pt(111) surfacesGRUZDKOV, Y. A; WATANABE, K; MATSUMOTO, Y et al.Surface science. 1996, Vol 363, Num 1-3, pp 195-203, issn 0039-6028Conference Paper

Photoemission study of low coverage potassium adsorption on the Si(111)1 × 1:As surfaceHAKANSSON, M. C; JOHANSSON, L. S. O.Surface science. 1995, Vol 342, Num 1-3, pp 293-298, issn 0039-6028Article

Dissociative chemisorption of nitrogen on Ru(0001)SHI, H; JACOBI, K; ERTL, G et al.The Journal of chemical physics. 1993, Vol 99, Num 11, pp 9248-9254, issn 0021-9606Article

Prewetting and density fluctuations in the prewetting supercritical phaseOMATA, K; YONEZAWA, F.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 42, pp 9431-9442, issn 0953-8984Article

Homoepitaxial growth of Pd on Pd(111) : a search for the contribution of electronic surface states to the Ehrlich-Schwoebel barrierSTELTENPOHL, A; MEMMEL, N.Surface science. 1998, Vol 402-04, pp 277-280, issn 0039-6028Conference Paper

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